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Micron MT29F1G08ABAEAWP-IT:E Flash Memory, SLC NAND, 1 Gbit, 128M x 8bit, Parallel, TSOP-I, 48 Pins 

MT29F1G08ABAEAWP-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

Open NAND flash interface (ONFI) 1.0-compliant, single-level cell (SLC) technology

Internal data move operations supported within the device from which data is read

Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion

Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

RESET (FFh) required as first command after power-on

Data retention: JESD47 compliant, endurance: 100,000 PROGRAM/ERASE cycles

1Gb density, 3.3V (2.7–3.6V) operating voltage

Industrial operating temperature range from -40°C to +85°C

Product Range: 3.3 V SLC NAND Flash Memories
 

MSL (Moisture Sensitivity Level): Level 3 – 168 hours
 

<h3 class="md-block-header-three">Micron MT29F1G08ABAEAWP-IT:E Flash Memory, SLC NAND, 1 Gbit, 128M x 8bit, Parallel, TSOP-I, 48 Pins </h3>MT29F1G08ABAEAWP-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.<ul class="md-block-unordered-list-item"><li>Open NAND flash interface (ONFI) 1.0-compliant, single-level cell (SLC) technology</li><li>Internal data move operations supported within the device from which data is read</li><li>Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion</li><li>WP# signal: write protect entire device</li><li>Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000</li><li>RESET (FFh) required as first command after power-on</li><li>Data retention: JESD47 compliant, endurance: 100,000 PROGRAM/ERASE cycles</li><li>1Gb density, 3.3V (2.7–3.6V) operating voltage</li><li>48-pin TSOP Type 1 package</li><li>Industrial operating temperature range from -40°C to +85°C</li></ul>Specifications<ul class="md-block-unordered-list-item"><li>Flash Memory Type: SLC NAND </li><li>Memory Density: 1 Gbit </li><li>Memory Configuration: 128M × 8 bit </li><li>Interfaces: Parallel </li><li>IC Case / Package: TSOP-I </li><li>No. of Pins: 48 Pins </li><li>Clock Frequency (Max): 50 MHz </li><li>Access Time: 16 ns </li><li>Supply Voltage (Min): 2.7 V </li><li>Supply Voltage (Nom): 3.3 V </li><li>Supply Voltage (Max): 3.6 V </li><li>Operating Temperature (Min): –40 °C </li><li>Operating Temperature (Max): 85 °C </li><li>IC Mounting: Surface Mount </li><li>Product Range: 3.3 V SLC NAND Flash Memories </li><li>MSL (Moisture Sensitivity Level): Level 3 – 168 hours </li></ul>

<h3>Micron MT29F1G08ABAEAWP-IT:E Flash Memory, SLC NAND, 1 Gbit, 128M x 8bit, Parallel, TSOP-I, 48 Pins&nbsp;</h3>
MT29F1G08ABAEAWP-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
<ul>
<li>Open NAND flash interface (ONFI) 1.0-compliant, single-level cell (SLC) technology</li>
<li>Internal data move operations supported within the device from which data is read</li>
<li>Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion</li>
<li>WP# signal: write protect entire device</li>
<li>Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000</li>
<li>RESET (FFh) required as first command after power-on</li>
<li>Data retention: JESD47 compliant, endurance: 100,000 PROGRAM/ERASE cycles</li>
<li>1Gb density, 3.3V (2.7–3.6V) operating voltage</li>
<li>48-pin TSOP Type 1 package</li>
<li>Industrial operating temperature range from -40°C to +85°C</li>
</ul>
Specifications
<ul>
<li>Flash Memory Type: SLC NAND 
&nbsp;</li>
<li>Memory Density: 1 Gbit 
&nbsp;</li>
<li>Memory Configuration: 128M × 8 bit 
&nbsp;</li>
<li>Interfaces: Parallel 
&nbsp;</li>
<li>IC Case / Package: TSOP-I 
&nbsp;</li>
<li>No. of Pins: 48 Pins 
&nbsp;</li>
<li>Clock Frequency (Max): 50 MHz 
&nbsp;</li>
<li>Access Time: 16 ns 
&nbsp;</li>
<li>Supply Voltage (Min): 2.7 V 
&nbsp;</li>
<li>Supply Voltage (Nom): 3.3 V 
&nbsp;</li>
<li>Supply Voltage (Max): 3.6 V 
&nbsp;</li>
<li>Operating Temperature (Min): –40 °C 
&nbsp;</li>
<li>Operating Temperature (Max): 85 °C 
&nbsp;</li>
<li>IC Mounting: Surface Mount 
&nbsp;</li>
<li>Product Range: 3.3 V SLC NAND Flash Memories 
&nbsp;</li>
<li>MSL (Moisture Sensitivity Level): Level 3 – 168 hours 
&nbsp;</li>
</ul>

MICT-S-A0000866752-1

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Micron MT29F1G08ABAEAWP-IT:E Flash Memory, Slc Nand, 1 Gbit, 128M X 8bit, Parallel, TSOP-I, 48 Pins

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