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Specification Tables

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Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

SOT-23, SOT-89, TO-205AD, TO-3, TO-247

Collector Emitter Voltage Max

140 V, 250 V, 450 V, 65 V, 400 V

Power Dissipation

5 W, 50 W, 150 W, 1.4 W, 3 W

DC Current Gain hFE

240 hFE, 50 hFE, 8 hFE, 450 hFE, 25 hFE

Transition Frequency

30 MHz, 400 MHz, 400kHz, 250 MHz, 70 MHz

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Rs Pro 1845615 Capacitive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Output, 10 - 30 V Dc, IP67

Rs Pro 1845631 Capacitive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Output, 10 - 30 V Dc, IP67

Rs Pro 7018219 Inductive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Output, 10 - 30 V Dc, IP67

Rs Pro 7018247 Inductive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Output, 10 - 30 V Dc, IP67

Rs Pro 8967254 Capacitive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Normally Open Output, 10 - 30 V

Rs Pro 1845616 Capacitive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Output, 10 - 30 V Dc, IP67

Rs Pro 1845629 Capacitive Barrel-Style Proximity Sensor, M30 X 1.5, 10 Mm Detection, Npn Normally Open & Normally Closed

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