Micron MT29F1G08ABAEAWP-IT:E Flash Memory, SLC NAND, 1 Gbit, 128M x 8bit, Parallel, TSOP-I, 48 Pins

MT29F1G08ABAEAWP-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

• Open NAND flash interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
• Internal data move operations supported within the device from which data is read
• Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion
• WP# signal: write protect entire device
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
• RESET (FFh) required as first command after power-on
• Data retention: JESD47 compliant, endurance: 100,000 PROGRAM/ERASE cycles
• 1Gb density, 3.3V (2.7–3.6V) operating voltage
• 48-pin TSOP Type 1 package
• Industrial operating temperature range from -40°C to +85°C

Specifications

• Flash Memory Type: SLC NAND
  
• Memory Density: 1 Gbit
  
• Memory Configuration: 128M × 8 bit
  
• Interfaces: Parallel
  
• IC Case / Package: TSOP-I
  
• No. of Pins: 48 Pins
  
• Clock Frequency (Max): 50 MHz
  
• Access Time: 16 ns
  
• Supply Voltage (Min): 2.7 V
  
• Supply Voltage (Nom): 3.3 V
  
• Supply Voltage (Max): 3.6 V
  
• Operating Temperature (Min): –40 °C
  
• Operating Temperature (Max): 85 °C
  
• IC Mounting: Surface Mount
  
• Product Range: 3.3 V SLC NAND Flash Memories
  
• MSL (Moisture Sensitivity Level): Level 3 – 168 hours