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Comchip Technology BC846B-G Bipolar Transistors - Bjt Sm Signal Transistor
Comchip Technology BC846B-G Bipolar Transistors - Bjt Sm Signal Transistor
Brand:
Comchip Technology
Model:
BC846B-G
Technical Data Sheets
Technical Data
Product Description
Comchip Technology BC846B-G Bipolar Transistors - BJT SM Signal Transistor
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Maximum DC Collector Current: 100 mA
Collector- Emitter Voltage VCEO Max: 65 V
Collector- Base Voltage VCBO: 80 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 500 mV
Pd - Power Dissipation: 200 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BC846
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Comchip Technology
Continuous Collector Current: 100 mA
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
DC Collector/Base Gain hfe Min: 200
DC Current Gain hFE Max: 450
S$ 25.00
(exc. GST)
S$ 27.25
(inc. GST)
Units
Discount
Unit Price
1
-
S$ 0.25
Quantity:
EA
MOQ of 100 EA
Bundle of 1 EA
Lead time of 10 working days required.
Item will be ready to dispatch within the lead time specified.
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Shop by Specification Table
You can find items with similar specifications from the table below.
Single Bipolar Junction Transistors
121 Items
Transistor Case Style
TO-92, TO-39, TO-205AD, TO-3, TO-18
Collector Emitter Voltage Max
60 V, 25 V, 250 V, 65 V, 400 V
Power Dissipation
150 W, 113 W, 10 W, 50 W, 1.4 W
DC Current Gain hFE
250 hFE, 8 hFE, 110 hFE, 450 hFE, 25 hFE
Transition Frequency
30 MHz, 400kHz, 250 MHz, 4 MHz, 70 MHz
DC Collector Current
100mA, 8A, 800mA, 1A, 40A
Collector Emitter Saturation Voltage Vce(on)
1 V, -1 V, 3 V, 400 mV, -1.8 V
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